Improved Carrier Mobility in 2 Few - Layer MoS 2 Field - E ff ect 3 Transistors with Ionic - Liquid Gating

12 tracted much attention due to unsur13 passed carrier mobility and high thermal 14 conductivity, 4 combined with excellent 15 chemical and thermal stability down to 16 the nanometer scale. The major drawback 17 is the absence of fundamental band gap, 18 which makes semimetallic graphene unsui19 table for conventional digital logic applica20 tions. Sustained efforts to engineer a band 21 gap in graphene have either caused severe 22 mobility degradation or require prohibi23 tively high bias voltages. 9